DOPING METHOD FOR A SEMICONDUCTOR DEVICE, CAPABLE OF DOPING A SPECIFIC REGION WITHOUT AN ION-IMPLANTATION METHOD

摘要

PURPOSE: A doping method for a semiconductor device is provided to reduce the generation of defects due to dopants using a thermal diffusion method in order to dope a specific region of the semiconductor device.;CONSTITUTION: A trench(17) is formed in a semiconductor substrate(10). An undoped layer(20) partially filling the trench is formed. A doped layer(21) in which dopant is doped is formed on the undoped layer. An insulating layer is formed on the upper side of the doped layer. A doping region(24) is formed at the trench sidewall in contact with the doped layer by applying heat for diffusing dopants.;COPYRIGHT KIPO 2011