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PHOTO DIODE STRUCTURE AND A PHOTO DIODE MANUFACTURING METHOD, CAPABLE OF FORMING THE DEPLETION REGION UNIFORMLY REGARDLESS OF THE OUTSIDE CONDITION
PHOTO DIODE STRUCTURE AND A PHOTO DIODE MANUFACTURING METHOD, CAPABLE OF FORMING THE DEPLETION REGION UNIFORMLY REGARDLESS OF THE OUTSIDE CONDITION
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机译:能够根据外部条件均匀地形成耗尽区的光电二极管结构和光电二极管制造方法
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摘要
PURPOSE: A photo diode structure and a photo diode manufacturing method are provided to improve the photo current in the visible light area relatively by blocking the photo current in the ultraviolet area.;CONSTITUTION: A first impurity layer(200) is formed on the surface of a substrate(100). The first impurity layer is opposite type to that of the substrate. A second impurity layer(300) is formed on the lower part of the first impurity layer. The second impurity layer is of the same type as that of the substrate.;COPYRIGHT KIPO 2011
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