首页> 中文期刊> 《哈尔滨工业大学学报:英文版》 >Optical diode behavior of photonic crystal structure with asymmetric Kerr defect

Optical diode behavior of photonic crystal structure with asymmetric Kerr defect

         

摘要

Optical diode behavior of asymmetric one-dimensional photonic crystal with Kerr defect is numerically investigated using nonlinear transfer matrix method. In the linear case, the intensity and the phase of transmitted field are the same for the forward and backward operations. In the nonlinear case, however, the transmitted intensities are much different for the two operations, which display diode characteristic. Physical origin of the anisotropic transmission lies in the different localizations in the defect layer of the two operations.

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