METHOD TO CONTROL A CRYSTALLIZATION BEHAVIOR FOR LOW TEMPERATURE-PROCESSED AND SOLUTION-PROCESSABLE OXIDE SEMICONDUCTOR

摘要

PURPOSE: A method for controlling crystallization for an oxide semiconductor for a solution process at a low temperature is provided to promote crystallization by controlling the thickness of a thin film. CONSTITUTION: A metal oxide precursor solution is coated on a substrate with the thickness of a thin film between 1 and 10 nm. The coated thin film is processed at a temperature of 200 to 350 degrees. The diluted solutions of the metal oxide precursor are made to control the thickness of the thin film between 1 and 10 nm by the coating of the metal oxide precursor solution. The diluted solutions of the metal oxide precursor include the metal oxide precursor of 0.01 to 0.09M.