Method to control a crystallization behavior for low temperature-processed and solution-processable oxide semiconductor

摘要

The present invention provides a method for producing a crystalline oxide semiconductor,;Coating a metal oxide precursor solution on a substrate with a thin film thickness of 1 to 10 nm or less; And;Low temperature heat treatment of the coated thin film at a temperature of 200 to 350 ° C;;It relates to a method for manufacturing a low temperature crystalline oxide semiconductor comprising a.;The present invention is characterized by promoting the crystallization by controlling the thickness of the thin film.;More specifically, there is an advantage of manufacturing an oxide semiconductor having a crystal phase through low temperature heat treatment, there is an advantage that the crystallization can be controlled by a simple process without going through a catalyst or ultraviolet light and other processes for promoting the crystallization reaction.;Low temperature process, solution process, oxide semiconductor, crystallization