首页> 外国专利> SPUTTERING APPARATUS WITH A DUAL CHAMBER, INCLUDING A SUBSTRATE CHAMBER, A MAGNETRON CHAMBER, A SPUTTERING TARGET, AND A PRESSURE CONTROLLER

SPUTTERING APPARATUS WITH A DUAL CHAMBER, INCLUDING A SUBSTRATE CHAMBER, A MAGNETRON CHAMBER, A SPUTTERING TARGET, AND A PRESSURE CONTROLLER

机译:具有双腔室的溅射装置,包括基体腔室,磁控腔,溅射靶和压力控制器

摘要

PURPOSE: A sputtering apparatus with a dual chamber is provided to save necessary energy for pressure adjustment by the reduction in a space which a pressure controller processes.;CONSTITUTION: A sputtering apparatus with a dual chamber comprises a substrate chamber(204), a magnetron chamber(202), a sputtering target(270), and a pressure controller(290). The substrate is loaded into the substrate chamber. The magnetron is installed in the magnetron chamber. The sputtering target is formed between the substrate chamber and the magnetron chamber. The pressure controller adjusts the pressure of the magnetron chamber differently.;COPYRIGHT KIPO 2011
机译:目的:提供具有双腔室的溅射设备,以减少压力控制器所处理的空间,从而节省压力调节所需的能量。组成:具有双腔室的溅射设备,包括基板腔室(204),磁控管室(202),溅射靶(270)和压力控制器(290)。基板被装载到基板室中。磁控管安装在磁控管腔中。溅射靶形成在基板室与磁控管室之间。压力控制器可不同地调节磁控管腔的压力。; COPYRIGHT KIPO 2011

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