首页> 外国专利> Preventing litter vapor coatings during sputtering of target, comprises moving substrate through plasma produced by magnetron in vacuum of process chamber, and introducing process gas for sputtering material of targets into process chamber

Preventing litter vapor coatings during sputtering of target, comprises moving substrate through plasma produced by magnetron in vacuum of process chamber, and introducing process gas for sputtering material of targets into process chamber

机译:防止靶材溅射过程中的杂物蒸气涂层,包括在处理室的真空中使衬底通过磁控管产生的等离子体移动,并将用于溅射靶材的处理气体引入处理室。

摘要

The method comprises moving a substrate, in a vacuum of a process chamber (4), through a plasma produced by a magnetron (5), and introducing a process gas for sputtering a material of targets connected with the magnetron into the process chamber. The process gas is supplied to a vicinity of the substrate and to a gas flow directed toward an internal space of the process chamber. The process gas is supplied to a substrate inlet along the substrate in a transport direction and to a substrate outlet (10) along the substrate opposite to the transport direction. The method comprises moving a substrate, in a vacuum of a process chamber (4), through plasma produced by a magnetron (5), and introducing a process gas for sputtering a material of targets connected with the magnetron into the process chamber. The process gas is supplied to a vicinity of the substrate and to a gas flow directed toward an internal space of the process chamber. The process gas is supplied to a substrate inlet along the substrate in a transport direction and to a substrate outlet (10) along the substrate opposite to the transport direction. A reactive gas is introduced in a mixture together with a working gas. An independent claim is included for an arrangement for preventing litter vapor coatings during sputtering of a target with a magnetron lying transverse to a transport direction of a substrate in a process chamber.
机译:该方法包括在处理室(4)的真空中使衬底移动通过由磁控管(5)产生的等离子体,并将用于溅射与磁控管连接的靶材的处理气体引入处理室。将处理气体供应到基板的附近以及流向处理室的内部空间的气流。处理气体沿着基板在传送方向上被供应到基板入口,并且沿着与传送方向相反的基板被供应到基板出口(10)。该方法包括在处理腔室(4)的真空中使衬底移动通过磁控管(5)产生的等离子体,并将用于溅射与磁控管连接的靶材的处理气体引入处理腔室。将处理气体供应到基板的附近以及流向处理室的内部空间的气流。处理气体沿着基板在传送方向上被供应到基板入口,并且沿着与传送方向相反的基板被供应到基板出口(10)。将反应性气体与工作气体一起引入混合物中。包括一种独立权利要求,其用于防止在溅射靶的过程中利用磁控管横向于基板在处理腔室中的输送方向进行溅射时的杂物蒸气涂层。

著录项

  • 公开/公告号DE102011079212A1

    专利类型

  • 公开/公告日2013-01-17

    原文格式PDF

  • 申请/专利权人 VON ARDENNE ANLAGENTECHNIK GMBH;

    申请/专利号DE20111079212

  • 发明设计人 LINS VOLKER;

    申请日2011-07-14

  • 分类号C23C14/56;C23C14/04;C23C14/34;H01J37/34;

  • 国家 DE

  • 入库时间 2022-08-21 16:22:21

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