首页> 外国专利> MASK FOR MANUFACTURING THE CONTACT HOLE OF A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE USING THE SAME CAPABLE OF PREVENTING THE GENERATION OF A BRIDGE PHENOMENON BETWEEN CONTACT HOLES

MASK FOR MANUFACTURING THE CONTACT HOLE OF A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE USING THE SAME CAPABLE OF PREVENTING THE GENERATION OF A BRIDGE PHENOMENON BETWEEN CONTACT HOLES

机译:用于制造半导体装置的接触孔的掩模以及使用能够防止接触孔之间的桥现象的产生的制造半导体装置的方法

摘要

PURPOSE: A mask for manufacturing the contact hole of a semiconductor device and a method for manufacturing the semiconductor device using the same are provided to improve the yield of manufacturing processes by preventing the denting phenomenon of the contact hole.;CONSTITUTION: A mask(100) for manufacturing the contact hole of a semiconductor device includes a main pattern(110) and a sub-pattern(120). The main pattern includes adjacent holes. The sub-pattern is formed at each hole of the main pattern and reduces exposure intensity between adjacent holes in an exposing operation. A photo lithography operation and an etching operation are implemented using the mask in order to form contact holes on the semiconductor device.;COPYRIGHT KIPO 2011
机译:目的:提供一种用于制造半导体器件的接触孔的掩模以及使用该掩模的半导体器件的制造方法,以通过防止接触孔的凹陷现象来提高制造工艺的成品率。;构成:掩模(100用于制造半导体器件的接触孔的半导体器件包括主图案(110)和子图案(120)。主图案包括相邻的孔。子图案形成在主图案的每个孔处,并在曝光操作中减小相邻孔之间的曝光强度。使用掩模实施光刻操作和蚀刻操作,以便在半导体器件上形成接触孔。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110054185A

    专利类型

  • 公开/公告日2011-05-25

    原文格式PDF

  • 申请/专利权人 DONGBU HITEK CO. LTD.;

    申请/专利号KR20090110745

  • 发明设计人 PARK JIN HO;

    申请日2009-11-17

  • 分类号G03F1/00;H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:55

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