MATERIAL FOR A RESIST SUBLAYER, A METHOD FOR FORMING THE RESIST SUBLAYER, A METHOD FOR FORMING PATTERNS, AND FULLERENE DERIVATIVE CAPABLE OF SUPPRESSING THE GENERATION OF TWIST IN A SUBSTRATE ETCHING PROCESS

摘要

PURPOSE: A material for a resist sublayer, a method for forming the resist sublayer, a method for forming patterns, and fullerene derivative are provided to overcome poisoning problems in an upper layer pattern forming process using chemical amplifying type resist.;CONSTITUTION: A material for a resist sublayer in a multilayered resist film includes fullerene derivative and an organic solvent. The fullerene derivative includes carboxylic group protected by thermal instable group. The fullerene derivative includes n partial structures represented by chemical formula 1. In the chemical formula 1, the R1 represents a thermal instable group. The R2 is one of hydrogen atom, a cyano group, -COOR3, C1 to C10 linear, branched, or cyclic alkyl group, C6 to C16 aryl group, C4 to C16 hetero aryl group, C7 to C20 aralkyl group and includes one of a carbonyl group, an ether group, an ester group, a cyano group, a carboxylic group, and a hydroxyl group. The R3 is one of hydrogen atom, the R1, C1 to C10 linear, branched, or cyclic alkyl group. The C^F represents carbon atom forming the fullerene structure of the fullerene derivative. The n is the integer of 1 to 30.;COPYRIGHT KIPO 2011