SEMICONDUCTOR DEVICE MANUFACTURING METHOD FOR REDUCING FLAWS IN A HIGH CONCENTRATION SEMICONDUCTOR APPARATUS MANUFACTURING PROCESS

摘要

PURPOSE: A semiconductor device manufacturing method is provided to increase a process margin of a photo lithography process arranging a minute pattern by increasing the accuracy in proximity correction technology, thereby improving the yield of a semiconductor apparatus and reducing manufacturing costs.;CONSTITUTION: A photo resist for testing is arranged on a semiconductor substrate. The LER(Line Edge Roughness) of a photo resist pattern(220) is measured. An extinction coefficient and intrinsic constant of the photo resist pattern are extracted based on the LER. The extinction coefficient and intrinsic constant are applied to optical proximity correction technology. The optical proximity correction technology is applied to a photo lithography process.;COPYRIGHT KIPO 2012