首页> 外国专利> SINGLE CRYSTAL METHOD AND A SINGLE CRYSTAL RAW MATERIAL, CAPABLE OF GROWING A SEMI INSULATING SINGLE CRYSTAL

SINGLE CRYSTAL METHOD AND A SINGLE CRYSTAL RAW MATERIAL, CAPABLE OF GROWING A SEMI INSULATING SINGLE CRYSTAL

机译:单晶体方法和单晶体原始材料,能够生长半绝缘单晶体

摘要

PURPOSE: A single crystal method and a single crystal raw material are provided to prevent the conduction of a circuit and a wire by implementing a semi insulating single crystal having high resistance and transmittance.;CONSTITUTION: In a single crystal method and a single crystal raw material, a seed assembly holder is attached to a seed assembly. The seed assembly holder with the seed assembly is loaded in a growth apparatus. A raw material is accommodated into the crucible which is arranged in the growth apparatus. The crucible is heated to sublimate the loaded raw material in the crucible to form a monocrystal of a 6H-SiC in the seed assembly.;COPYRIGHT KIPO 2012
机译:目的:提供一种单晶方法和单晶原料,以通过实现具有高电阻和透射率的半绝缘单晶来防止电路和导线的导通。;构成:在单晶方法和单晶原料中在材料上,种子组件支架固定在种子组件上。具有种子组件的种子组件支架被装载在生长设备中。将原材料容纳在布置在生长设备中的坩埚中。加热坩埚以升华坩埚中装载的原料,从而在种子组件中形成6H-SiC单晶。; COPYRIGHT KIPO 2012

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