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METHOD FOR MANUFACTURING GRAPHENE USING A GERMANIUM LAYER CAPABLE OF PREVENTING THE GENERATION OF METAL IMPURITIES BY OMITTING A METAL CATALYST

机译:使用能够通过省略金属催化剂来防止金属杂质生成的锗层制造石墨烯的方法

摘要

PURPOSE: A method for manufacturing graphene using a germanium layer is provided to obtain pure graphene directly on a germanium layer or a germanium substrate without a metal catalyst.;CONSTITUTION: A method for manufacturing graphene(130) using a germanium layer(120) includes the following: The germanium layer is formed on a substrate(110). The graphene is directly formed on the germanium layer by supplying carbon containing gas into a chamber in which the substrate is arranged. The substrate is composed of one selected from a group including silicon, silicon oxide, quartz, glass, plastic, sapphire. The graphene is composed of one to three layers by a chemical vapor deposition method. The thickness of the germanium layer is between 100nm and 10um.;COPYRIGHT KIPO 2012
机译:目的:提供一种使用锗层制造石墨烯的方法,以在没有金属催化剂的情况下直接在锗层或锗衬底上直接获得纯石墨烯。;构成:一种使用锗层(120)制造石墨烯的方法(130)包括:如下:在衬底(110)上形成锗层。通过将含碳的气体供应到其中布置基板的腔室中,石墨烯直接形成在锗层上。基板由选自包括硅,氧化硅,石英,玻璃,塑料,蓝宝石的组中的一种构成。石墨烯通过化学气相沉积法由1-3层组成。锗层的厚度在100nm至10um之间; COPYRIGHT KIPO 2012

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