METHOD FOR FORMING GRAPHENE WIRING CAPABLE OF FORMING GRAPHENE WIRING BY ALTERNATELY STACKING METAL CATALYTIC LAYERS AND GRAPHENE LAYERS

摘要

PURPOSE: A method for forming graphene wiring is provided to reduce the scattering phenomenon of electrons if metal catalytic layers and graphene layers are alternately stacked.;CONSTITUTION: A method for forming graphene wiring includes the following: a metal catalytic layer is formed on a substrate(S200); a graphene layer is formed on the metal catalytic layer(S300); and a plurality of metal catalytic layers and a plurality of graphene layers are stacked on the graphene layer(S400). The metal catalytic layers are formed based on a method selected from a group including an atomic layer deposition method, a sputtering method, a thermal deposition method, an electron beam deposition method, a molecular beam deposition method, a pulse-laser deposition method, a chemical vapor deposition method, a sol-gel method, and the combination of the same.;COPYRIGHT KIPO 2013;[Reference numerals] (S100) Preparing a substrate; (S200) Forming a metal catalytic layer on the substrate; (S300) Forming a graphene layer on the metal catalytic layer; (S400) Forming a wiring of the pre-determined thickness by alternatively stacking plurals of metal catalytic layers and graphene layers