SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH A DIMINISHED UNIT CELL AREA CAPABLE OF PRODUCING A MEMORY CELL IN A LIMITED 4F^2 SPACE AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor integrated circuit device and a manufacturing method thereof are provided to prevent the noise and the coupling of a plate electrode by burying a word line in a semiconductor substrate.;CONSTITUTION: A plurality of word lines(WL2, WL3) is extended in parallel. Bit lines(BL1, BL2) limit a plurality of intersections and memory unit cells. A gate electrode(150) controls a pair of memory unit cells which faces between the word lines. A storage node contact(190) is respectively arranged in the space of the unit memory cell. A bit line contact unit(175) is formed in the bit line of one side of the intersection.;COPYRIGHT KIPO 2012