首页> 外国专利> METHOD FOR ELIMINATING IMPURITIES IN A TETRACHLORIDE-BASED TRICHLOROSILANE PREPARING PROCESS CAPABLE OF ELIMINATING THE IMPURITIES BY REACTING THE IMPURITIES WITH SODIUM CHLORIDE

METHOD FOR ELIMINATING IMPURITIES IN A TETRACHLORIDE-BASED TRICHLOROSILANE PREPARING PROCESS CAPABLE OF ELIMINATING THE IMPURITIES BY REACTING THE IMPURITIES WITH SODIUM CHLORIDE

机译:消除四氯化萘基三氟硅氧烷中杂质的方法,该方法制备了可通过用氯化钠反应去除杂质的方法

摘要

PURPOSE: A method for eliminating impurities in a tetrachloride-based trichlorosilane preparing process is provided to prevent the clogging phenomenon of processing units due to the impurities by reacting the impurities to be a liquefied compound.;CONSTITUTION: Impurities are reacted with sodium chloride(6) in a reactor under a pre-set temperature, a liquefied compound is formed. The liquefied compound is eliminated using an eliminating nozzle(7) under a pre-set temperature. The impurities are aluminum compounds or trichloroaluminum impurities. The liquefied compound is a tetrachloride aluminum compound. The pre-set temperature of the reactor is between 150 and 350 degrees Celsius. The pre-set temperature of the eliminating nozzle is between 150 and 400 degrees Celsius.;COPYRIGHT KIPO 2012
机译:目的:提供一种消除四氯化物基三氯硅烷制备过程中杂质的方法,以通过使杂质变为液化化合物来防止由于杂质引起的加工单元堵塞现象;组成:杂质与氯化钠反应(6 )在预设温度下的反应器中,形成液化的化合物。使用消除喷嘴(7)在预设温度下消除液化的化合物。杂质是铝化合物或三氯铝杂质。液化的化合物是四氯化铝化合物。反应器的预设温度在150至350摄氏度之间。消除喷嘴的预设温度在150到400摄氏度之间。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20110119479A

    专利类型

  • 公开/公告日2011-11-02

    原文格式PDF

  • 申请/专利权人 KCC CORPORATION;

    申请/专利号KR20100039219

  • 申请日2010-04-27

  • 分类号C01B33/107;B01D11/00;B01J8/18;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:51

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