METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE CAPABLE OF SIMPLIFYING MANUFACTURING PROCESSES BY ELIMINATING AN ANNEAL PROCESS AFTER SOURCE/DRAIN IMPURITY IONS ARE IMPLANTED

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to perform an annealing process after a silicon film is deposited, thereby simplifying manufacturing processes. ;CONSTITUTION: A gate electrode(130) is formed on a semiconductor substrate and a spacer(150) is formed on both sides of the gate electrode. Impurity ions for forming a source/drain area(160) are implanted onto the surface of the semiconductor substrate of the gate electrode. The semiconductor substrate is loaded on processing equipment so that a silicon oxide film is deposited on the semiconductor substrate.;COPYRIGHT KIPO 2011