Eliminating siloxane impurities from silane process gas using next-generation purification

摘要

Silane and other process gases used for thin-film formation in semiconductor fabrication must be purified in order to eliminate contaminants that can lead to yield-inhibiting defects. One of the most difficult contaminants to control is moisture in silane gas, which can cause particle generation in tubing and chambers and can adversely affect the quality of thin films, which have become increasingly thinner with each process generation.