METHOD FOR FABRICATING SCHOTTKY DIODE USING SILICON-BASED CMOS PROCESS

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing technology, and more particularly to Schottky diode manufacturing process technology. SUMMARY OF THE INVENTION An object of the present invention is to provide a Schottky diode manufacturing method capable of securing forward characteristics without accompanying degradation in integration and productivity using a silicon-based CMOS Morse process. The present invention utilizes a silicide-MOS gate silicon junction rather than using a conventional silicide-N well junction in fabricating a Schottky diode through a silicon substrate CMOS process. That is, when the gate is formed in the MOS region, the silicon pattern is left in the Schottky diode region, and the N-type doping is applied to the silicon pattern during the source / drain doping process of the NMOS region, and this is used as a cathode. Silicides are formed and used as anodes. In this case, since the dopant implanted into the silicon pattern does not diffuse out of the silicon pattern, it is possible to prevent the degradation of the forward characteristic due to the increase in the resistance of the cathode. On the other hand, the present invention can be implemented through a simple change of the mask layout without a special process added for the Schottky diode manufacturing, there is no loss in terms of integration.;Schottky Diodes, Silicide-N Type Silicon Junctions, Forward Characteristics, Device Isolation, Dopant Diffusion