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Metal bump formation method on semiconductor connection pad

机译:半导体连接垫上的金属凸块形成方法

摘要

A method for forming metal bumps on a semiconductor connection pads is provided to secure firm connection between the semiconductor connection pad and a metal pump by using the adhesion of the metal and an insulating adhesive layer. A semiconductor device(10) is provided. The semiconductor device includes a connection pad(12). A UBM(Under Bump Metallurgy)(16) is formed on the connection pad of the semiconductor device. A metal foil(20) and an insulating adhesive layer(18) are formed on the semiconductor device including the UBM. The metallic foil and the insulation adhesion layer are removed from the UBM. A hole is formed in order to expose the UBM. An electroless metal layer(24) is formed in the wall of the hole. A resistance film is formed on the metallic foil. The resistance film does not cover the hole. The conduction current flows to the UBM through the metallic foil and the electroless metal layer. The metal bump(28) is formed on the UBM. The resistance film and the metallic foil are removed.
机译:提供一种在半导体连接垫上形成金属凸块的方法,以通过利用金属和绝缘粘合层的粘合来确保半导体连接垫和金属泵之间的牢固连接。提供一种半导体器件(10)。该半导体器件包括连接垫(12)。在半导体器件的连接焊盘上形成UBM(凸块下冶金)(16)。在包括UBM的半导体器件上形成金属箔(20)和绝缘粘合层(18)。从UBM去除金属箔和绝缘粘附层。形成孔以暴露UBM。在孔的壁中形成化学镀金属层(24)。在金属箔上形成电阻膜。电阻膜没有覆盖孔。传导电流通过金属箔和化学镀层流到UBM。在UBM上形成金属凸块(28)。去除电阻膜和金属箔。

著录项

  • 公开/公告号KR101050567B1

    专利类型

  • 公开/公告日2011-07-19

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070083433

  • 发明设计人 유 완-링;

    申请日2007-08-20

  • 分类号H01L23/48;H01L21/60;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:02

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