Silicon Oxide Etching Method Using Supercritical Carbon Dioxide and Cleaning Etch Residue

摘要

PURPOSE: A silicon oxide etching method and a method for cleaning etching residue are provided to efficiently remove the etching residue generated by the reaction between a sacrificial layer and etchant by using supercritical carbon dioxide. CONSTITUTION: A semiconductor substrate is supplied to a processing chamber from the outside(E0). Supercritical carbon dioxide and etchant are injected to the processing chamber and are stirred(E1). The pressure is applied from the supercritical solvent supply unit to the supply chamber. The etching is performed by injecting etchant into a process chamber by closing and opening a valve between a supply chamber and a process chamber.