A method for producing a field effect transistor, tunnel - field effect transistor, and integrated circuit arrangement with at least one field effect transistor

摘要

A method for producing a field effect transistor (t1), comprising the steps of:Providing a substrate (10, 310), on which an auxiliary layer (14, 311) is arranged,Structuring of the auxiliary layer (14, 311) by removal of material of the auxiliary layer (14, 311), wherein at least one auxiliary area (18, 319a, 319b) is generated,Generating a first spacing element (26) in a region in the material of the auxiliary layer (14, 311) has been removed,Doping of a first connection area (28) of a field effect transistor (t1), wherein the first spacer element (26) and the auxiliary area (18, 319a, 319b) serve as a mask,Covering of the first connection area (28) with a covering material (30, 390),Removal of material of said auxiliary area (18, 319a, 319b),Generating a second spacer element (74) in a region in the material of said auxiliary area (18, 319a, 319b) has been removed, andDoping of a second transition zone (80) of the field effect transistor (t1), wherein the second spacer element (80) and the covering material (30, 390) as a mask..