Semiconductor device with window opening as an interface to the environment coupling

摘要

A window opening (11) in a semiconductor device is fabricated based on a gate structure that serves as an efficient etch stop layer for reliably etching an insulation layer stack without exposing the photosensitive semiconductor region. The polysilicon of the gate structure (4) is removed by an established gate etching process, the gate insulating layer preserving the integrity of the photosensitive semiconductor material.