Leveling of a material system in a semiconductor component with the use of a not - selectively in - situ prepared abrasive

摘要

For complex cmp - processes in which the removal of different dielectric materials is necessary, possibly in the presence of a poly silicon material, an abrasive material is at the point of the use of adapted by a suitable ph - value is selected and by providing an agglomeration of the abrasive particles is avoided. The in - situ - preparation of the grinding means material further allows for a very dynamic adaptation of the material removal conditions, if, for example, the polysilicon material of the gate electrodes structures in exchange gate method is exposed.