Leveling of a material systems in the case of a semiconductor device with the use of a prepared in situ nonselective abrasive

摘要

A method for leveling a surface of a semiconductor component in the presence of at least two different dielectric materials, and wherein the at least two different dielectric materials comprise silicon oxide and silicon nitride, wherein the process comprises:Providing a first solution in a manufacturing environment, wherein the first solution has a first ph value and abrasive particles;Providing a second solution in the manufacturing environment, wherein the second solution contains an acid;Generating an abrasive solution in the manufacturing environment of at least the first and the second solution, wherein the abrasive solution has a second ph value, which is smaller than the first ph value, wherein the second ph value to a convergence of erosion rates of the at least two different dielectric materials in the case of a given proportion for the abrasive particles in the abrasive solution, so that a balance of the erosion rates is set, by adjusting the second ph value to a value of between 6.5 and 8 of a portion of the abrasive particles to a value of between 6% by weight and 9% by weight; andCarrying out a planarization in the manufacturing environment under application of the abrasive solution produced in the manufacturing environment.