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An in-situ Fabrication and Characterization System Developed for High Performance Organic Semiconductor Devices

机译:为高性能有机半导体器件开发的原位制造和表征系统

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摘要

We have designed and set up a fabrication and characterization system for organic devices which enables us to assemble all components of devices and to characterize the device properties without breaking the vacuum. Using this system, top and bottom contact C_(60) field effect transistors (FETs) were fabricated and their performance was characterized. The top contact FET exhibited a mobility as high as 1.4 cm~2/(V·s), which was higher than the bottom contact FET.
机译:我们已经设计并建立了有机器件的制造和表征系统,使我们能够组装器件的所有组件并表征器件的性能而不会破坏真空。使用该系统,制造了顶部和底部接触C_(60)场效应晶体管(FET),并对其性能进行了表征。顶部接触FET的迁移率高达1.4 cm〜2 /(V·s),高于底部接触FET的迁移率。

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