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Integrated circuit device incorporating metallurigacal bond to enhance thermal conduction to a heat sink

机译:结合了冶金学键以增强到散热器的热传导的集成电路器件

摘要

An integrated circuit device incorporating a metallurgical bond to enhance thermal conduction to a heat sink. In a semiconductor device, a surface of an integrated circuit die is metallurgically bonded to a surface of a heat sink. In an exemplary method of manufacturing the device, the upper surface of a package substrate includes an inner region and a peripheral region. The integrated circuit die is positioned over the substrate surface and a first surface of the integrated circuit die is placed in contact with the package substrate. A metallic layer is formed on a second opposing surface of the integrated circuit die. A preform is positioned on the metallic layer and a heat sink is positioned over the preform. A joint layer is formed with the preform, metallurgically bonding the heat sink to the second surface of the integrated circuit die.
机译:一种集成了冶金结合以增强至散热器的热传导的集成电路器件。在半导体器件中,集成电路管芯的表面冶金地结合到散热器的表面。在制造器件的示例性方法中,封装基板的上表面包括内部区域和外围区域。集成电路管芯位于衬底表面上方,并且集成电路管芯的第一表面放置成与封装衬底接触。在集成电路管芯的第二相对表面上形成金属层。预制件位于金属层上,散热器位于预制件上方。结合层与预成型件一起形成,将散热器冶金结合到集成电路管芯的第二表面。

著录项

  • 公开/公告号GB201020754D0

    专利类型

  • 公开/公告日2011-01-19

    原文格式PDF

  • 申请/专利权人 AGERE SYSTEMS INC.;

    申请/专利号GB20100020754

  • 发明设计人

    申请日2006-09-05

  • 分类号H01L23/373;H01L21/48;H01L21/60;H01L23/498;

  • 国家 GB

  • 入库时间 2022-08-21 17:45:37

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