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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Silicon monolithic MM-wave integrated circuit (SIMMWIC) devices mounted up-side-down on a copper heat sink integral with cavity resonator
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Silicon monolithic MM-wave integrated circuit (SIMMWIC) devices mounted up-side-down on a copper heat sink integral with cavity resonator

机译:硅单片MM波集成电路(SIMMWIC)器件上下颠倒安装在与腔谐振器集成在一起的铜散热片上

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摘要

Silicon monolithic MM-wave integrated circuits (SIMMWIC) used as oscillators in radar system applications in the 60-80 GHz regime are mounted on a heat sink with integrated resonator. The heat sink consists of a thin carrier plate (aluminum nitride (AlN) or copper (Cu)) and and a gold plated copper block with integrated resonator cavity. The resonator cavity is formed by a rectangular cavity milled in the Cu block, terminated on the top by the gold plated carrier plate on top of which a MM-wave emitting integrated coplanar slot-transmitter is mounted up-side-down. The main part of the emitted RF power is radiated through the substrate-perpendicular to the chip plane-the other part is coupled through a slit on the carrier plate into the resonator cavity leading to a higher spectral purity and a stabilization of the oscillating frequency.
机译:在60-80 GHz频段的雷达系统应用中用作振荡器的硅单片MM波集成电路(SIMMWIC)安装在带有集成谐振器的散热器上。散热器由薄的承载板(氮化铝(AlN)或铜(Cu))和带有集成谐振腔的镀金铜块组成。谐振腔由在Cu块中铣削的矩形腔形成,矩形腔在顶部终止于镀金的载体板,在该载体的顶部上下颠倒地安装了发射MM波的集成共面缝隙发射器。发射的RF功率的主要部分通过垂直于芯片平面的基板辐射,另一部分通过载体板上的缝隙耦合到谐振腔中,从而导致更高的频谱纯度和稳定的振荡频率。

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