首页> 外国专利> METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR, DISPLAY DEVICE, SENSOR, AND X-RAY DIGITAL PHOTOGRAPHING DEVICE

METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR, DISPLAY DEVICE, SENSOR, AND X-RAY DIGITAL PHOTOGRAPHING DEVICE

机译:制造薄膜晶体管,薄膜晶体管,显示装置,传感器和X射线数字照相装置的方法

摘要

PROBLEM TO BE SOLVED: To provide a thin-film transistor and the like having a high field-effect mobility and performing normally-off driving while increasing selectivity of a substrate.;SOLUTION: When an oxygen partial pressure to the total pressure of an atmosphere in a deposition chamber in a deposition step of an active layer is defined as Po2depo(%), and an oxygen partial pressure to the total pressure of an atmosphere in a heat treatment step is defined as Po2anneal(%), the deposition step and the heat treatment step are performed so that the oxygen partial pressure Po2anneal(%) in the heat treatment step satisfies a relation of -20/3Po2depo+40/3≤Po2anneal≤-800/43Po2depo+5900/43.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种薄膜晶体管等,其具有高的场效应迁移率并且在增加基板的选择性的同时执行常关驱动。解决方案:当氧分压相对于大气的总压时将活性层的蒸镀工序中的蒸镀室内的Po 2 depo(%)定义为,将热处理工序中的相对于大气的总压力的氧分压定义为Po。进行 2 退火(%),沉积步骤和热处理步骤,以使热处理步骤中的氧分压Po 2 退火(%)满足关系-20 / 3Po 2 depo + 40 /3≤Po 2 退火≤-800/ 43Po 2 depo + 5900/43。; COPYRIGHT :(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP2012191072A

    专利类型

  • 公开/公告日2012-10-04

    原文格式PDF

  • 申请/专利权人 FUJIFILM CORP;

    申请/专利号JP20110054718

  • 申请日2011-03-11

  • 分类号H01L29/786;H01L21/336;H01L27/146;H01L27/144;G02F1/1368;H01L21/203;H01L21/316;

  • 国家 JP

  • 入库时间 2022-08-21 17:43:10

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