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High-efficiency III-V compound semiconductor solar cell device with oxidation window layer

机译:具有氧化窗口层的高效III-V族化合物半导体太阳能电池器件

摘要

The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.
机译:本申请利用氧化工艺来制造III-V族化合物半导体太阳能电池器件。通过氧化工艺,设置在电池单元上的窗口层被氧化以提高太阳能电池装置的效率。氧化窗口具有增加的带隙,以最小化电子和空穴的表面复合。氧化的窗口还提高了在常规窗口层中吸收的波长处的透明度。

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