GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL, METHOD OF MANUFACTURING GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL, AND ARTIFICIAL SATELLITE

摘要

A Group III-V compound semiconductor solar cell includes a buffer layer (108) and a first cell (131) both between a first electrode (121) and a second electrode (102). The buffer layer (108) has a portion in which first segments (141a, 142a, 143a, 144a) and second segments (141b, 142b, 143b, 144b) are alternately provided. Each of the first segments has a Group III element composition that continuously changes with an increasing thickness of the buffer layer (108) as traced from a side located opposite where the first cell (131) is disposed toward a side where the first cell (131) is disposed. Each of the second segments has a Group III element composition that changes without an increase in the thickness of the buffer layer (108).