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MANUFACTURING METHOD AND MANUFACTURING DEVICE FOR GLUED WAFER

机译:粘晶硅片的制造方法及制造装置

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing device for a glued wafer which can easily remove only oxide film residue while leaving an oxide film on a wafer for a support substrate.;SOLUTION: A manufacturing method for a glued wafer comprises: a gluing process of gluing a wafer for an active layer and a wafer for a support substrate through an oxide film to form a composite wafer; a heat treatment process of performing a heat treatment on the composite wafer and of strengthening the adhesion of the glued surfaces; a trimming process of beveling the outer peripheral part of the wafer for an active layer after the heat treatment; an etching process of etching the outer peripheral part of the beveled wafer for an active layer and for exposing the outer peripheral part of the oxide film of the wafer for an active layer; an oxide film removal process of attaching an adhesive tape on the outer peripheral part of the oxide film, and then peeling the adhesive tape, and removing a part of the oxide film. A manufacturing device for a glued wafer comprises: tape attachment means for attaching an adhesive tape on the outer peripheral part of the oxide film; tape peeling means for removing the oxide film by peeling the adhesive tape.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种粘合晶片的制造方法和制造装置,其能够容易地仅去除氧化膜残留物,同时在用于支撑基板的晶片上留下氧化膜。解决方案:粘合晶片的制造方法包括: :粘合工序,其通过氧化膜将有源层用晶片和支撑基板用晶片粘合而形成复合晶片。在复合晶片上进行热处理并增强胶合表面的粘附力的热处理工艺;修整工艺,该工艺在热处理之后将用于有源层的晶片的外围部分斜切;蚀刻工艺,其蚀刻用于活性层的斜面晶片的外周部分,并且用于暴露用于活性层的晶片的氧化膜的外周部分;氧化膜去除工序是,在氧化膜的外周部粘贴胶带,然后剥离该胶带,去除一部分氧化膜。一种用于粘合晶片的制造设备,包括:胶带附着装置,用于将胶带附着在氧化膜的外周部分上;胶带剥离装置,用于通过剥离胶带来去除氧化膜。;版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012059965A

    专利类型

  • 公开/公告日2012-03-22

    原文格式PDF

  • 申请/专利权人 SUMCO CORP;

    申请/专利号JP20100202420

  • 发明设计人 YOSHIMARU KOJI;MORIKAWA YASUYUKI;

    申请日2010-09-09

  • 分类号H01L21/02;H01L27/12;H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-21 17:40:57

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