Immersion ArF laser exposure for liquid and immersion ArF laser exposure method

摘要

Resolution of minute line width/line interval pattern makes possible in the immersion exposure technology in semiconductor production and the like. Being the liquid for immersion type exposure which designates saturated hydrocarbons chemical compound as the main component, content of the impurity which includes unsaturated bond or the hetero atom in structure, below total 2g/mL, does not have the unsaturated bond which (ii) conjugation is done with the chemical compound which possesses the unsaturated bond which respectively, (i) conjugation is done below total 30g/mL, with the amines which (iii) unsaturated bond the possession are not done below total 15g/mL, (iv) (i) or the hetero ring compound, alcohol other than (iii), ethers and with the containing halogen compound below total 100g/mL is uses the thing with the chemical compound which has the unsaturated bond which conjugation is not done.