CHEMICALLY AMPLIFIED POSITIVE RESIST MATERIAL FOR ArF LIQUID IMMERSION EXPOSURE AND PATTERN FORMING PROCESS

摘要

PROBLEM TO BE SOLVED: To construct a pattern profile with high resolution, having high hydrophobic property, reduced elution in immersion water and controlled acid diffusion.;SOLUTION: A chemically amplified positive resist material for ArF liquid immersion exposure comprises (A) a compound indicated by the formula (1-1), (B) acid generator indicated by the formula (1-2), (C) base resin, and (D) organic solvent. In the formula (1-1), Ar represents aryl group, and in the formula (1-2), R¹ represents alkyl group, alkenyl group or aralkyl group, R² represents hydrogen atom or trifluoromethyl group, and Ar represents aryl group.;COPYRIGHT: (C)2013,JPO&INPIT