首页> 外国专利> SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND VARIABLE WAVELENGTH LIGHT SOURCE DEVICE, SD-OCT DEVICE, SS-OCT DEVICE BY SEMICONDUCTOR LIGHT-EMITTING ELEMENT

SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND VARIABLE WAVELENGTH LIGHT SOURCE DEVICE, SD-OCT DEVICE, SS-OCT DEVICE BY SEMICONDUCTOR LIGHT-EMITTING ELEMENT

机译:半导体发光元件,可变波长光源装置,SD-OCT装置,SS-OCT装置的半导体发光元件

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and so on, capable of obtaining a desired spectral characteristic by localized plasmon resonance with a simple structure.SOLUTION: The semiconductor light-emitting element in which a plurality of semiconductor layers having an active layer that emits light by electric current injection are stacked on a substrate, comprises a metal dot layer neighboring the active layer, and the dot metal layer is configured so that a plurality of metal dots having a dot diameter to provide localized plasmon resonance for a prescribed wavelength are arranged in parallel to the substrate.
机译:解决的问题:提供一种半导体发光元件等,其能够通过简单的结构通过局部等离子体激元共振获得期望的光谱特性。解决方案:半导体发光元件,其中多个半导体层具有通过电流注入而发光的有源层堆叠在基板上,包括与有源层相邻的金属点层,并且点金属层被配置为使得多个具有点直径的金属点提供局部等离子体激元共振。规定的波长平行于基板排列。

著录项

  • 公开/公告号JP2012069770A

    专利类型

  • 公开/公告日2012-04-05

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP20100213824

  • 发明设计人 OIGAWA MAKOTO;

    申请日2010-09-24

  • 分类号H01L33/04;G01N21/17;G01N21/01;H01S5/50;

  • 国家 JP

  • 入库时间 2022-08-21 17:38:50

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号