The disclosed semiconductor light-emitting element is configured from layering an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (160); and a first electrode (200), which is the cathode, is formed on the p-type semiconductor layer (160). Also, between the p-type semiconductor layer (160) and a reflecting layer (220b), the first electrode (200) is provided with a crystalline first transparent electrode layer (210) and a non-crystalline second transparent electrode layer (220a). The crystalline first transparent electrode layer (210) increases adhesion with the p-type semiconductor layer (160), and the non-crystalline second transparent electrode layer (220a) suppresses delamination of the reflecting layer (220b). Also, the first transparent electrode layer (210) and the second transparent electrode layer (220a) transmit light radiated from the light-emitting layer and suppress degradation of reflective characteristics. In this way, delamination of the reflective layer and degradation of reflective characteristics are suppressed in a semiconductor light-emitting element mounted using flip-chip (FC) mounting.
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