SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having a specific planar shape formed on a nitride substrate, which can achieve ideal light extraction with simple manufacturing processes.;SOLUTION: A semiconductor light-emitting element comprises: a nitride substrate; and a semiconductor layer part including active layer structure for emitting light of peak emission wavelength λ and formed on a principal surface of the nitride substrate. The semiconductor light-emitting element satisfies the following equation: L_sc×tan{sin^-1(1/n_s(λ))}≤t_s (where t_s represents the maximum physical thickness of the nitride substrate, L_sc represents the longest length of a line segment created by optional two points on the principal surface of the nitride substrate and n_s(λ) represents a refraction index at a wavelength λ of the nitride substrate).;COPYRIGHT: (C)2014,JPO&INPIT