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Monoclinic type vanadium dioxide thin film manufacturing equipment, monoclinic type vanadium dioxide thin film manufacturing method, the switching element manufacturing method, and the switching element

机译:单斜型二氧化钒薄膜制造设备,单斜型二氧化钒薄膜制造方法,开关元件的制造方法以及开关元件

摘要

PROBLEM TO BE SOLVED: To provide an apparatus for producing a thin film of vanadium dioxide, which is suitable for mass-producing a semiconductor element (switching element) having the thin film of vanadium dioxide formed thereon.;SOLUTION: The apparatus 1 for producing the thin film of vanadium dioxide by depositing the thin film of vanadium dioxide on a substrate 2 with a sputtering technique comprises: a vacuum vessel 3; a heating means 4 which is arranged in the vacuum vessel 3, and heats a placed substrate 2 at 300 to 450°C; a holder part 5 which is arranged so as to oppose to the heating means 4, mounts a target material containing vanadium thereon and is provided with a magnet 52; a gas introduction tube 6 for introducing an inert gas and oxygen gas into the vacuum vessel 3; an electric power supply 7 which is connected to the holder part 5 in order to apply high-frequency voltage to the target material 51; and an electroconductive metallic member 8 which is arranged between the heating means 4 and the target material 51, and is connected to an electric power supply 81 for applying high-frequency voltage to the metallic member 8.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种用于生产二氧化钒薄膜的设备,该设备适用于批量生产其上形成有二氧化钒薄膜的半导体元件(开关元件)。解决方案:用于生产的设备1通过溅射技术将二氧化钒薄膜沉积在基板2上的二氧化钒薄膜包括:真空容器3;加热装置4,其布置在真空容器3中,并在300至450℃下加热放置的基板2。设置成与加热装置4相对的保持器部分5,在其上装有含钒的靶材并装有磁铁52。气体引入管6,用于将惰性气体和氧气引入真空容器3。电源7,其连接到保持器部分5,以便向靶材51施加高频电压。导电金属构件8,其布置在加热装置4和目标材料51之间,并且连接到用于向金属构件8施加高频电压的电源81。版权所有:(C)2007,JPO&INPIT

著录项

  • 公开/公告号JP4859104B2

    专利类型

  • 公开/公告日2012-01-25

    原文格式PDF

  • 申请/专利权人 学校法人東海大学;

    申请/专利号JP20060049147

  • 发明设计人 沖村 邦雄;久保 直崇;

    申请日2006-02-24

  • 分类号C23C14/08;H01L21/363;C23C14/34;H01L45/00;H01L49/00;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-21 17:37:13

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