A Vanadium Oxide Film 'Switching' Element

摘要

Vanadium dioxide films were sputtered onto alumina substrates by a radio-frequency method. The films were heat-treated at 600C to insure good crystallinity. At 68C, the resistivity changed sharply at this so-called metal-semiconductor transition temperature. The resistance of the films can also be 'switched' under an applied voltage through essentially a thermal process. For an applied voltage of 200 volts, for instance, the estimated transition time is of the order of a fraction of a microsecond. (Author)