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Substrate etching mechanism, the substrate etching method and vacuum process equipment

机译:基板蚀刻机构,基板蚀刻方法及真空处理设备

摘要

Substrate etching mechanism used in the vacuum process apparatus for ionizing the gas introduced to emit electrons into the vacuum chamber, cleaned by etching the substrate placed on the turntable provided in the vacuum chamber The substrate etching mechanism A is provided with a, and the filaments of the plurality of which are connected in parallel with the power lead terminal pair for introducing power to the filament as the electron source, the power lead between a pair of terminals. A plurality of filaments to substrate etching mechanism disposed in a direction perpendicular to the rotational axis in a plane perpendicular to the axis of rotation of the turntable. Vacuum process apparatus using the etching mechanism. Substrate etching method using the substrate etching mechanism, the vacuum process equipment.
机译:真空处理设备中使用的衬底蚀刻机构,用于将引入电子以释放电子的气体离子化到真空室中,并通过蚀刻置于真空室中设置在转盘上的衬底进行清洗。衬底蚀刻机构A配有a,且细丝它们中的多个与电源引线端子对并联连接,以将功率引入作为电子源的灯丝,电源引线在一对端子之间。在垂直于转盘的旋转轴线的平面中,在垂直于旋转轴线的方向上设置多个细丝到基板的蚀刻机构。使用蚀刻机制的真空处理设备。基板蚀刻方法采用基板蚀刻机构,真空工艺设备。

著录项

  • 公开/公告号JPWO2010082340A1

    专利类型

  • 公开/公告日2012-06-28

    原文格式PDF

  • 申请/专利权人 日新電機株式会社;

    申请/专利号JP20100546519

  • 发明设计人 三上 隆司;大丸 智弘;

    申请日2009-01-16

  • 分类号C23G5/00;C23C14/02;

  • 国家 JP

  • 入库时间 2022-08-21 17:36:33

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