The nano- wire field-effect transistor and its production method, and the integrated circuit which includes this

摘要

2 triangular columellas which (100) on the SOI baseplate which has surface direction, consist of silicon crystal and form the nano- wire, that ridge through the insulator, in order to oppose mutually, the nano- wire field-effect transistor which features that it is arranged in the top and bottom and (100) processing the silicon crystal which forms process and the SOI layer which prepare the SOI baseplate which has surface direction, said silicon crystal, 2 triangular columellas through that ridge, with process, and crystal anisotropic etching which it makes the section rectangular plate shaped body which stands up way it opposes mutually,Production method of the nano- wire field-effect transistor which includes the process which it processes to the form which is arranged in the top and bottom and makes the nano- wire, and the integrated circuit which includes this.