The method of forming the field-effect transistor, and the method of forming transistor gate array and the integrated circuit which includes the gate array peripheral circuit

摘要

This invention, method, the method of forming the field-effect transistor gate and of forming transistor gate array and the integrated circuit which includes the gate array peripheral circuit the method of forming the field-effect transistor, the first gate and includes the method of forming the integrated circuit which includes the transistor gate array which includes the second ground insulated gate. With one execution example, as for the method of forming the field-effect transistor, the baseplate (11) the masking material (22, 24 and 26) the step which is formed is included on the semi- conductive material. The trench (30) passing, the masking material (22, 24 and 26) the semi- conductive material (11) it is formed in. The gate dielectric material (32) the semi- conductive material (11) the trench in (30) is formed inside. The gate material (34), the masking material (22, 24 and 26) the trench in (30) inside, and the semi- conductive material (11) the trench in (30) in inside, the gate dielectric material (32) is accumulated on. The source/drain territory is formed. Other feature and execution example are examined. Selective figure Figure 10