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REDUCING DEFECT RATE DURING DEPOSITION OF A CHANNEL SEMICONDUCTOR ALLOY INTO AN IN SITU RECESSED ACTIVE REGION
REDUCING DEFECT RATE DURING DEPOSITION OF A CHANNEL SEMICONDUCTOR ALLOY INTO AN IN SITU RECESSED ACTIVE REGION
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机译:在将通道半导体合金沉积到原位回退的活动区域中的过程中降低缺陷率
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摘要
When forming sophisticated high-k metal gate electrode structures on the basis of a threshold voltage adjusting semiconductor alloy, a highly efficient in situ process technique may be applied in order to form a recess in dedicated active regions and refilling the recess with a semiconductor alloy. In order to reduce or avoid etch-related irregularities during the recessing of the active regions, the degree of aluminum contamination during the previous processing, in particular during the formation of the trench isolation regions, may be controlled.
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