Reducing the defect rate during the depositing a channel half conductor alloy in an in - situ -, recessed, active zone

摘要

In the manufacture of complex metal gate electrodes structures with a large ε on the basis of a threshold value voltage of an adjusting ends semiconductor alloy, a very efficient in - situ - process engineering used to form a depression in special active areas and in order to produce the depression can be filled with a semiconductor alloy. In order to irregularities caused by etching during the forming of the recess of the active zones, to reduce or avoid that, the degree of aluminum contamination during the preceding machining, and in particular during the production of the trench isolation regions controlled.