首页> 外国专利> PHOTOMASK AND PHOTOMASK SUBSTRATE WITH REDUCED LIGHT SCATTERING PROPERTIES

PHOTOMASK AND PHOTOMASK SUBSTRATE WITH REDUCED LIGHT SCATTERING PROPERTIES

机译:具有降低的光散射特性的光掩模和光掩模基质

摘要

A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.
机译:提供了一种掩模基板,光掩模及其形成方法。该光掩模包括基本透光的基板和设置在透光基板上方的电路图案。电路图案包括设置在基本透光的衬底上方的相移层。在相移层上方设置基本遮光的层。至少一个阻挡层设置在基本遮光层之上。基本上光屏蔽层的最上部分不包括抗反射特性,并且至少一个阻挡层包括最上层的硬掩模层和下面的抗反射层。

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