首页> 外国专利> METHOD FOR CORRECTING PHOTOMASK SUBSTRATE, METHOD FOR MANUFACTURING PHOTOMASK SUBSTRATE, METHOD FOR TREATING PHOTOMASK SUBSTRATE, PHOTOMASK SUBSTRATE, METHOD FOR MANUFACTURING PHOTOMASK, AND SUBSTRATE TREATING DEVICE

METHOD FOR CORRECTING PHOTOMASK SUBSTRATE, METHOD FOR MANUFACTURING PHOTOMASK SUBSTRATE, METHOD FOR TREATING PHOTOMASK SUBSTRATE, PHOTOMASK SUBSTRATE, METHOD FOR MANUFACTURING PHOTOMASK, AND SUBSTRATE TREATING DEVICE

机译:校正光影基质的方法,制造光影基质的方法,处理光影基质的方法,光影基质,制造光影的方法以及基质处理设备

摘要

To correct a defect in a photomask without much requiring a time and man-hours, and thereby, to improve production efficiency and qualities in manufacturing a photomask.SOLUTION: A method for correcting a photomask substrate is provided, which includes: a step of preparing a photomask substrate 10 having an optical film 200 for forming a transfer pattern, formed on one main surface of a transparent substrate 100; and a correction step of forming a correction film with respect to a gap defect that occurs in the optical film 200. The correction step is carried out by, while supplying a raw material gas to the vicinity of the position where the gap defect is present on a first main surface of the photomask substrate 10 where the optical film is formed, irradiating the photomask substrate 10 through a second main surface side thereof with a laser beam and allowing the raw material gas to react by the laser beam transmitted through the gap defect to deposit a correction film at the position of the gap defect on the first main surface.SELECTED DRAWING: Figure 6
机译:本发明提供一种光掩膜基板的校正方法,包括:制备步骤,该光掩膜的缺陷校正不需要太多的时间和工时,从而提高了光掩膜的生产效率和质量。光掩模基板10,其具有形成在透明基板100的一个主面上的用于形成转印图案的光学膜200。以及对在光学膜200中产生的间隙缺陷形成校正膜的校正步骤。通过将原料气体供给到存在间隙缺陷的位置附近,同时进行校正步骤。在形成有光学膜的光掩模基板10的第一主表面上,通过光掩模基板10的第二主表面侧照射光掩模基板10,并使原料气体与通过间隙缺陷而透射的激光束发生反应,从而使光透过。在第一个主表面上的间隙缺陷位置处沉积校正膜。选定的图:图6

著录项

  • 公开/公告号JP2020056998A

    专利类型

  • 公开/公告日2020-04-09

    原文格式PDF

  • 申请/专利权人 HOYA CORP;

    申请/专利号JP20190167977

  • 发明设计人 YAMAGUCHI NOBORU;

    申请日2019-09-17

  • 分类号G03F1/72;G03F1/82;G03F1/50;

  • 国家 JP

  • 入库时间 2022-08-21 11:36:07

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