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BIPOLAR DEVICE COMPATIBLE WITH CMOS PROCESS TECHNOLOGY
BIPOLAR DEVICE COMPATIBLE WITH CMOS PROCESS TECHNOLOGY
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机译:与CMOS工艺技术兼容的双极器件
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摘要
The present invention discloses a bipolar device. An emitter is formed in a semiconductor substrate. A collector is laterally spaced from the emitter in the substrate. A gate terminal is formed on the substrate, defining a space between the emitter and the collector. An extrinsic base is formed on the substrate with a predetermined distance from either the emitter or the collector, wherein the base, the emitter, the collector and the gate terminal are located in an active area defined by a hole in a surrounding isolation structure in the substrate.
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