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Bipolar device compatible with CMOS process technology
Bipolar device compatible with CMOS process technology
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机译:与CMOS工艺技术兼容的双极设备
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摘要
A bipolar device includes: an emitter of a first polarity type constructed on a semiconductor substrate; a collector of the first polarity type constructed on the semiconductor substrate; a gate pattern in a mesh configuration defining the emitter and the collector; an intrinsic base of a second polarity type underlying the gate pattern; and an extrinsic base constructed atop the gate pattern and coupled with the intrinsic base, for functioning together with the intrinsic base as a base of the bipolar device.
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