首页>
外国专利>
MULTI-GATE FIELD-EFFECT TRANSISTOR WITH ENHANCED AND ADAPTABLE LOW-FREQUENCY NOISE
MULTI-GATE FIELD-EFFECT TRANSISTOR WITH ENHANCED AND ADAPTABLE LOW-FREQUENCY NOISE
展开▼
机译:具有增强型和自适应低频噪声的多栅极场效应晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
A field-effect transistor has an extra gate above a shallow trench isolation (STI) to enhance and to adapt the low-frequency noise induced by an STI-silicon interface. By changing the voltage applied to the STI gate, the field-effect transistor is able to adapt its low-frequency noise over four decades. The field-effect transistor can be fabricated with a standard CMOS logic process without additional masks or process modification.
展开▼