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Multi-gate field-effect transistor with enhanced and adaptable low-frequency noise
Multi-gate field-effect transistor with enhanced and adaptable low-frequency noise
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机译:具有增强且适应性强的低频噪声的多栅极场效应晶体管
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摘要
A field-effect transistor has an extra gate above a shallow trench isolation (STI) to enhance and to adapt the low-frequency noise induced by an STI-silicon interface. By changing the voltage applied to the STI gate, the field-effect transistor is able to adapt its low-frequency noise over four decades. The field-effect transistor can be fabricated with a standard CMOS logic process without additional masks or process modification.
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