A method of fabricating a silicon carbide substrate that can reduce the fabrication cost of a semiconductor device employing the silicon carbide substrate includes the steps of: preparing a SiC substrate made of single crystal silicon carbide; arranging a base substrate in a vessel so as to face one main face of the SiC substrate; forming a base layer made of silicon carbide so as to contact one main face of the SiC substrate by heating a base substrate to a temperature range greater than or equal to a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming a base layer, a silicon generation source made of a substance including silicon is arranged in the vessel, in addition to the SiC substrate and the base substrate.
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